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| POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519 Sales Office: Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510 RECTIFIER DIODE AR649 Repetitive voltage up to Mean forward current Surge current 2500 V 4645 A 45 kA TARGET SPECIFICATION nov 02 - ISSUE : 03 Symbol Characteristic Conditions Tj [C] Value Unit BLOCKING V V I RRM RSM RRM Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current V=VRRM 175 175 175 2500 2600 100 V V mA CONDUCTING I I I F (AV) Mean forward current Mean forward current Surge forward current I t Forward voltage Threshold voltage Forward slope resistance 180 sin ,50 Hz, Th=55C, double side cooled 180 sin ,50 Hz, Tc=85C, double side cooled Sine wave, 10 ms without reverse voltage Forward current = 2000 A 175 4645 4515 45 10125 x 1E3 175 175 175 0.90 0.70 0.100 A A kA As V V mohm F (AV) FSM I t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current 175 s C A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating junction temperature Mounting force Mass ORDERING INFORMATION : AR649 S 25 standard specification Junction to heatsink, double side cooled Case to heatsink, double side cooled 14 3 -30 / 35.0 850 175 / 40.0 C/kW C/kW C kN g VRRM/100 AR649 RECTIFIER DIODE TARGET SPECIFICATION nov 02 - ISSUE : 03 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation DISSIPATION CHARACTERISTICS SQUARE WAVE Th [C] 190 170 150 130 110 30 90 60 70 50 0 1000 2000 90 120 180 DC 3000 4000 5000 6000 7000 IF(AV) [A] PF(AV) [W] 10000 9000 8000 7000 6000 5000 4000 3000 2000 1000 0 0 1000 2000 3000 4000 5000 6000 7000 IF(AV) [A] 30 60 90 120 180 DC AR649 RECTIFIER DIODE TARGET SPECIFICATION nov 02 - ISSUE : 03 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation DISSIPATION CHARACTERISTICS SINE WAVE Th [C] 190 170 150 130 110 30 90 70 60 90 120 180 50 0 1000 2000 3000 IF(AV) [A] 4000 5000 6000 PF(AV) [W] 9000 8000 7000 6000 5000 4000 3000 2000 1000 0 0 1000 2000 3000 IF(AV) [A] 4000 5000 6000 30 60 90 120 180 AR649 RECTIFIER DIODE TARGET SPECIFICATION nov 02 - ISSUE : 03 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FORWARD CHARACTERISTIC Tj = 175 C 14000 12000 10000 Forward Current [A] ITSM [kA] 8000 6000 4000 2000 5 0 0.6 1.1 1.6 2.1 Forward Voltage [V] 0 1 50 45 40 35 30 25 20 15 10 SURGE CHARACTERISTIC Tj = 175 C 10 n cycles 100 TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 16.0 14.0 12.0 Zth j-h [C/kW] 10.0 8.0 6.0 4.0 2.0 0.0 0.001 0.01 0.1 t[s] 1 10 100 Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 m. In the interest of product improvementPOSEICO SpA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. |
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